Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2429
DESCRIPTION
·With TO-3 package
·High voltage ,high speed
·Wide area of safe operation
APPLICATIONS
·High speed switching
·Converters and inverters
PINNING (See Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=
SYMBOL PARAMETER CONDITIONS MAX UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 15 A
ICM Collector current-Peak 20 A
IB Base current 5 A
PT Total power dissipation
Collector-base voltage Open emitter 450 V
Collector-emitter voltage Open base 400 V
Emitter-base voltage Open collector 7 V
℃)
T
=25℃
C
150 W
Tj Junction temperature 175
T
Storage temperature -65~175
stg
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2429
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
I
V
CEO(SUS)
Collector-emitter sustaining voltage
=1A ; RBE=∞
C
400 V
V
Emitter-base breakdown voltage IE=1mA ; IC=0 7 V
(BR)EBO
V
Collector-emitter saturation voltage IC=10A; IB=2A 0.45 1.0 V
CEsat
V
Base-emitter saturation voltage IC=10A; IB=2A 1.2 2.0 V
BEsat
I
Collector cut-off current VCB=450V; IE=0 0.1 mA
CBO
I
Emitter cut-off current VEB=6V; IC=0 0.1 mA
EBO
hFE DC current gai n IC=10A ; VCE=5V 10 15 40
fT Transition frequency IC=2A ; VCE=10V,f=10MHz 35 MHz
COB Collector output capacitance IE=0 ; VCB=10V;f=1MHz 230 pF
Switching times
tr Rise time 0.15 0.5
μs
V
=150V,IC=10A
t
Storage time 1.20 2.5
stg
tf Fall time
CC
=-IB2=2A
I
B1
0.10 0.3
2
μs
μs
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2429
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
Loading...