Page 1
INCHANGE Semiconductor isc RF Product Specification
isc Silicon NPN RF Transistor 2SC2408
DESCRIPTION
·Low Noise
NF = 2.4 dB TYP. ;@ f = 200 MHz
·High Gain
︱S
APPLICATIONS
·Designed for use in high frequency wide band amplifier.
ABSOLUTE MAXIMUM RATINGS(T
2
︱
= 21 dB TYP. ;@ f = 200 MHz
21e
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
P
T
T
CBO
CEO
EBO
I
C
stg
Collector-Base Voltage 35 V
Collector-Emitter Voltage 18 V
Emitter-Base Voltage 3 V
Collector Current-Continuous 150 mA
Collector Power Dissipation
C
@T
=25℃
C
Junction Temperature 150 ℃
J
Storage Temperature Range -65~150 ℃
0.6 W
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc RF Product Specification
isc Silicon NPN RF Transistor 2SC2408
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
︱S
I
CBO
I
EBO
h
C
FE
f
OB
21e
T
Collector Cutoff Current VCB= 20V; IE= 0 0.5 μA
Emitter Cutoff Current VEB= 2V; IC= 0 0.5 μA
DC Current Gain IC= 50mA ; VCE= 10V 30 200
Current-Gain—Bandwidth Product IC= 50mA ; VCE= 10V 3.5 GHz
Output Capacitance IE= 0 ; VCB= 10V; f= 1.0MHz 1.25 2.0 pF
2
Insertion Power Gain
︱
NF Noise Figure
I
= 50mA ; VCE= 10V; f= 200MHz;
C
= 50Ω
R
G
I
= 30mA ; VCE= 10V; f= 200MHz;
C
= 50Ω
R
G
18 21 dB
2.4 4.0 dB
isc Website：www.iscsemi.cn
2
Loading...