Datasheet 2SC2377 Datasheet (Panasonic)

Transistor

2SC2377

Silicon NPN epitaxial planer type

For high-frequency amplification

Features

■

●

Optimum for RF amplification of FM/AM radios.

●

High transition frequency fT.

●

M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current

Emitter cutoff current Forward current transfer ratio Base to emitter voltage Transition frequency Noise figure Power gain Common emitter reverse transfer capacitance

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

T

j

T

stg

Symbol

I

CBO

I

CEO

I

EBO

*

h

FE

V

BE

f

T

NF PG C

re

Ratings

30 20

3

15 400 150

–55 ~ +150

VCB = 10V, IE = 0 VCE = 20V, IB = 0 VEB = 3V, IC = 0 VCB = 6V, IE = –1mA VCB = 6V, IE = –1mA VCB = 6V, IE = –1mA, f = 100MHz VCB = 6V, IE = –1mA VCB = 6V, IE = –1mA VCE = 6V, IC = 1mA

Unit

V V V

mA

mW

˚C ˚C

Conditions

6.9±0.1

1.5

1.5 R0.9

0.4

R0.9

R0.7

1.0±0.1

0.85

0.55±0.1 0.45±0.05

2.5 2.5

1:Base 2:Collector EIAJ:SC–71 3:Emitter M Type Mold Package

min

typ

2.5±0.1

3.5±0.1

2.0±0.2

2.4±0.21.25±0.05

123

max

100

10

1

65

260

720

450

20

650

3.3 24

0.8

5

1

Unit: mm

1.0

4.1±0.2 4.5±0.1

Unit

nA

µA µA

mV

MHz

dB dB

pF

*

hFE Rank classification

Rank C D

h

FE

65 ~ 160 100 ~ 260

1

Transistor

2SC2377

PC — Ta IC — V

500

)

450

mW

(

400

C

350

300

250

200

150

100

50

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

IC — V

BE

30

Ta=75˚C

25˚C

–25˚C

25

) mA

(

20

C

15

10

Collector current I

5

0

02.01.60.4 1.20.8

Base to emitter voltage VBE (V

VCE=6V

CE

12

10

) mA

(

8

C

6

4

Collector current I

2

0

018612

)

Collector to emitter voltage VCE (V

V

CE(sat)

)

100

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.1 1 10 1000.3 3 30

25˚C

Collector current IC (mA

— I

Ta=75˚C

–25˚C

Ta=25˚C

IB=100µA

80µA

60µA

40µA

20µA

)

C

IC/IB=10

)

12

10

) mA

(

8

C

6

4

Collector current I

2

0

0 18060 120

360

FE

300

240

180

120

60

Forward current transfer ratio h

0

0.1 1 10 1000.3 3 30

IC — I

B

Ta=25˚C

VCE=10V

6V

Base current IB (µA

hFE — I

C

VCE=6V

Ta=75˚C

25˚C

–25˚C

Collector current IC (mA

)

fT — I

1200

)

1000

MHz

(

T

800

600

400

200

Transition frequency f

0 – 0.1 –1 –10 –100– 0.3 –3 –30

Emitter current IE (mA

2

E

VCB=10V

6V

Ta=25˚C

)

Zrb — I

E

120

)

Ω

(

100

rb

80

60

40

20

VCE=6V

Reverse transfer impedance Z

0

– 0.1 – 0.3 –1 –3 –10

Emitter current IE (mA

f=2MHz Ta=25˚C

10V

)

Cre — V

)

2.4

pF

(

re

2.0

1.6

1.2

0.8

0.4

Common emitter reverse transfer capacitance C

0

0.1 1 10 1000.3 3 30

Collector to emitter voltage VCE (V

CE

IC=1mA f=10.7MHz Ta=25˚C

)

Transistor

2SC2377

) pF

(

Cob — V

1.2

1.0

ob

0.8

0.6

0.4

0.2

CB

Collector output capacitance C

0

030252051510

Collector to base voltage VCB (V

bie — g

ie

20

yie=gie+jb

ie

–2mA

25

–4mA

–7mA

100

58

VCE=10V

18

)

16

mS

(

14

ie

12

10

–1mA

8

58

=– 0.5mA

6

E

I

4

Input susceptance b

25

2

f=10.7MHz

0

015936 12

Input conductance gie (mS

IE=0 f=1MHz Ta=25˚C

150

100

PG — I

E

40

35

)

30

dB

(

25

20

15

Power gain PG

10

5

0

– 0.1 –1 –10 –100– 0.3 –3 –30

)

Emitter current IE (mA

bre — g

0

)

yre=gre+jb

re

VCE=10V

mS

(

–1

re

–2

–3

–4

–5

Reverse transfer susceptance b

–6

– 0.5 0– 0.1– 0.4 – 0.2– 0.3

)

Reverse transfer conductance gre (mS

VCE=10V

6V

re

IE=–7mA

f=150MHz

f=100MHz R Ta=25˚C

–1mA –4mA

100

=50Ω

g

58

10.7

)

25

12

10

) dB

(

8

6

4

Noise figure NF

2

0

– 0.1 –1 –10 –100– 0.3 –3 –30

0

) mS

(

–20

fe

–40

–60

–80

–100

Forward transfer susceptance b

–120

0 1008020 6040

)

Forward transfer conductance gfe (mS

NF — I

VCE=6V, 10V

Emitter current IE (mA

bfe — g

–2mA

100

150

IE=–7mA

10.7

100

– 0.4mA

f=150MHz

–1mA

150

E

fe

58

f=100MHz R

g

Ta=25˚C

25

–4mA

yfe=gfe+jb VCE=10V

=50kΩ

)

58

fe

)

boe — g

1.2

–1mA

)

1.0

=– 0.5mA

E

I

mS

(

oe

0.8

0.6

0.4

0.2

Output susceptance b

f=10.7MHz

0

00.50.40.1 0.30.2

Output conductance goe (mS

–2mA

–4mA

–7mA

58

25

oe

100

yoe=goe+jb VCE=10V

150

oe

)

3