Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2365
DESCRIPTION
·With TO-3 package
·High breakdown voltage
APPLICATIONS
·For use in switch-mode CTV supply
systems
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 6 A
ICM Collector current-peak 8 A
Base
Fig.1 simplified outline (TO-3) and symbol
Collector-base voltage Open emitter 600 V
Collector-emitter voltage Open base 500 V
Emitter-base voltage Open collector 6 V
PC Collector power dissipation TC=25℃ 50 W
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2365
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
Collector-emitter breakdown voltage IC=10mA ;IB=0 500 V
(BR)CEO
Emitter-base breakdown voltage IE=1mA ;IC=0 6 V
(BR)EBO
V
Collector-emitter saturation voltage IC=4A; IB=1.25A 3.0 V
CEsat
V
Base-emitter saturation voltage IC=4A; IB=1.25A 1.6 V
BEsat
I
Collector cut-off current VCB=600V; IE=0 0.1 mA
CBO
I
Emitter cut-off current VEB=6V; IC=0 0.1 mA
EBO
h
DC current gain IC=3A ; VCE=4V 12
FE
fT Transition frequency IC=0.5A ; VCE=10V 10 MHz
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2365
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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