Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2361
DESCRIPTION ·
·With
·Complement to type 2SA1123
·Low collector saturation voltage
APPLICATIONS
·For power amplifier applications
PINNING
TO-220C package
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage Open emitter 100 V
CBO
V
Collector-emitter voltage Open base 70 V
CEO
V
Emitter-base voltage Open collector 6 V
EBO
IC Collector current (DC) 4 A
PC Collector dissipation
Tj Junction temperature 150
T
Storage temperature -50~150
stg
℃)
T
=25℃
C
25 W
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2361
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
(BR)EBO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE
Collector-emitter sustaining voltage IC=0.1 A; IB=0 70 V
Emitter-base breakdown voltage IE=1m A; IC=0 6 V
Collector-emitter saturation voltage IC=4A; IB=0.4A 1.5 V
Base-emitter on voltage IC=3A ; VCE=4V 2.0 V
Collector cut-off current VCB=100V; IE=0 10
Emitter cut-off current VEB=6V; IC=0 10
DC current gain IC=2.5A ; VCE=3V 50 240
fT Transition frequency IC=0.5A ; VCE=10V 70 MHz
μA
μA
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2361
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3
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