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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2358
DESCRIPTION ·
·With TO-3 package
·High voltage,high speed
APPLICATIONS
·Designed for switching-mode power
supplies ,CRT scanning,inverters,
and other industrial applications
PINNING(see fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 10 A
PT Total power dissipation TC=25℃ 150 W
Tj Junction temperature 200 ℃
T
stg
Collector-base voltage Open emitter 1000 V
Collector-emitter voltage Open base 800 V
Emitter-base voltage Open collector 7 V
Storage temperature -65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
Thermal resistance junction to case 1.17 ℃/W
th j-C
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2358
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
Collector-emitter sustaining voltage IC=10mA; IB=0 800 V
Emitter-base breakdown voltage IE=1m A;IC=0 7 V
Collector-emitter saturation voltage IC=5 A;IB=1 A 1.5 V
Base-emitter saturation voltage IC=5 A;IB=1 A 1.5 V
Collector cut-off current VCB=1000V; IE=0 0.1 mA
Emitter cut-off current VEB=7V; IC=0 0.1 mA
hFE DC current gai n IC=5A ; VCE=5V 15
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2358
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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