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固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2331
DESCRIPTION
·With TO-220 package
·Complement to type 2SA1008
·Low collector saturation voltage
·Fast switching speed
APPLICATIONS
·Switching regulators
·DC-DC converters
·High frequency power amplifiers
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 2.0 A
ICM Collector current-Peak 4.0 A
IB Base current 1.0 A
PT Total power dissipation
Collector-base voltage Open emitter 100 V
Collector-emitter voltage Open base 100 V
Emitter-base voltage Open collector 7 V
℃)
Ta=25℃
T
=25℃
C
1.5
W
15
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2331
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
Switching times resistive load
Collector-emitter sustaining voltage IC=1.0A ,IB=0.1A,L=1mH 100 V
CEO(SUS)
V
Collector-emitter saturation voltage IC=1A; IB=0.1A 0.6 V
CEsat
V
Base-emitter saturation voltage IC=1A ;IB=0.1A 1.5 V
BEsat
I
Collector cut-off current VCB=100V; IE=0 10 μA
CBO
I
Emitter cut-off current VEB=5V; IC=0 10 μA
EBO
h
DC current gain IC=0.1A ; VCE=5V 40
FE-1
h
DC current gain IC=1A ; VCE=5V 40 200
FE-2
ton Turn-on time 0.5 μs
ts Storage time 1.5 μs
tf Fall time
IC=1.0A IB1=- IB2=0.1A
=50Ω;VCC≈50V
R
L
0.5 μs
h
Classifications
FE-2
M L K
40-80 60-120 100-200
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2331
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
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