Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2305
DESCRIPTION
·With TO-3PN package
·High breakdown voltage
·Fast switching speed
·Wide safe operating area
APPLICATIONS
·For switching regulator applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current (DC) 7 A
ICM Collector current-peak 14 A
IB Base current (DC) 3 A
Collector-base voltage Open emitter 400 V
Collector-emitt er voltage Open base 400 V
Emitter-base voltage Open collector 8 V
T
PC Collector power dissipation
Tj Junction temperature 150
T
Storage temperature -55~150
stg
=25℃
C
80 W
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2305
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
I
V
(BR)CEO
Collector-emitter breakdown voltage
=10mA ;RBE=∞
C
400 V
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
Collector-base breakdown voltage IC=1m A; IE=0 400 V
Emitter-base breakdown voltage IE=1m A; IC=0 7 V
Collector-emitter saturation voltage IC=4A; IB=0.8A 1.0 V
Base-emitter saturation voltage IC=4A; IB=0.8A 1.5 V
Collector cut-off current VCB=400V; IE=0 10
Emitter cut-off current VEB=5V; IC=0 10
DC current gain IC=0.8A ; VCE=5V 15 50
DC current gain IC=4A ; VCE=5V 10
μA
μA
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2305
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
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