Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2304
DESCRIPTION
·With TO-3 package
·High speed ,high voltage
·Wide area of safe operation
APPLICATIONS
·For switching regulator application
PINNING (See Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
MAXIMUN RATINGS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 12 A
PT Total power dissipation Tmb≤25℃ 100 W
Tj Junction temperature 150 ℃
Collector-base voltage Open emitter 500 V
Collector-emitter voltage Open base 400 V
Emitter-base voltage Open collector 7 V
T
Storage temperature -55~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2304
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE -2
Collector-emitter breakdown voltage IC=10mA ; IB=0 400 V
Collector-base breakdown voltage IC=1mA ; IE=0 500 V
Emitter-base breakdown voltage IE=1mA ; IC=0 7 V
Collector-emitter saturation voltage IC=8A; IB=1.6A 1.0 V
Base-emitter saturation voltage IC=8A; IB=1.6A 1.5 V
Collector cut-off current VCB=500V; IE=0 0.1 mA
Emitter cut-off current VEB=7V; IC=0 0.1 mA
DC current gain IC=1A ; VCE=4V 15 50
DC current gain IC=10A ; VCE=4V 10
fT Transition frequency IC=1A ; VCE=10V 35 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2304
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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