Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2275 2SC2275A
DESCRIPTION
·With TO-220 package
·Complement to type 2SA985/985A
·High breakdown voltage
APPLICATIONS
·For low frequency and high frequency
power amplifer applicatons
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
2SC2275 120
V
CBO
V
CEO
V
EBO
IC Collector current 1.5 A
ICM Collector current-peak 3.0 A
Collector-base voltage
2SC2275A
2SC2275 120
Collector-emitter voltage
2SC2275A
Emitter-base voltage Open collector 5 V
Open emitter
Open base
V
150
V
150
IB Base current 0.3 A
PC Collector power dissipation TC=25℃ 25 W
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2275 2SC2275A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
2SC2275 120
V
(BR)CEO
V
CEsat
V
BEsat
Collector-emitter
breakdown voltage
2SC2275A
Collector-emitter saturation voltage IC=1A; IB=0.1A 2.0 V
Base-emitter saturation voltage IC=1A; IB=0.1A 1.5 V
IC=25mA ,IB=0
V
150
I
Collector cut-off current VCB=120V; IE=0 1.0
CBO
I
Emitter cut-off current VEB=3V; IC=0 1.0
EBO
h
DC current gain IC=5mA ; VCE=5V 35
FE-1
h
DC current gain IC=0.3A ; VCE=5V 60 150 320
FE-2
COB Output capacitance IE=0 ; VCB=10V,f=1MHz 19 pF
fT Transition frequency IC=0.2A ; VCE=5V 200 MHz
μA
μA
h
Classifications
FE-2
R Q P
60-120 100-200 160-320
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2275 2SC2275A
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
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