Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2270
DESCRIPTION ·
·With TO-126 package
·Low collector saturation voltage
·High collector power dissipation
APPLICATIONS
·Strobo flash applications
·Medimum power amplifier applications
PINNING
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current (DC) 5 A
ICM Collector current-peak 8 A
IE Emitter current (DC) -5 A
IEM Emitter current-peak -8 A
Collector-base voltage Open emitter 50 V
Collector-emitter voltage Open base 20 V
Emitter-base voltage Open collector 8 V
℃)
Ta=25℃ 1.0
PC Total power dissipation
=25℃ 10
T
C
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
W
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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2270
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CEsat
Collector-emitter breakdown voltage IC=10mA ;IB=0 20 V
Emitter-base breakdown voltage IE=1mA ;IC=0 8 V
Collector-emitter saturation voltage IC=4A; IB=0.1A 1.0 V
VBE Base-emitter voltage IC=4A ; VCE=2V 1.5 V
I
Collector cut-off current VCB=40V; IE=0 0.1
CBO
I
Emitter cut-off current VEB=8V; IC=0 0.1
EBO
h
DC current gain IC=0.5A ; VCE=2V 140 450
FE-1
h
DC current gain IC=4A ; VCE=2V 70
FE-2
μA
μA
fT Transition frequency IC=0.5A ; VCE=2V 100 MHz
COB Collector output capacitance IE=0;f=1MHz ; VCB=10V 40 pF
h
Classifications
FE-1
A B C
140-240 200-330 300-450
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2270
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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