Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2266
DESCRIPTION
·With TO-3 package
·High dielectric strength
·Short switching time
APPLICATIONS
·For switching regulator application
PINNING (See Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
MAXIMUN RATINGS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 10 A
IB Base current 3 A
PT Total power dissipation Tmb≤25℃ 100 W
Tj Junction temperature 150 ℃
T
stg
Collector-base voltage Open emitter 500 V
Collector-emitter voltage Open base 400 V
Emitter-base voltage Open collector 7 V
Storage temperature -65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
Thermal resistance from junction to case 1.25 ℃/W
th j-c
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2266
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
Collector-emitter breakdown voltage IC=10mA ; IB=0 400 V
Emitter-base breakdown voltage IE=1mA ; IC=0 7 V
Collector-emitter saturation voltage IC=8A; IB=1.6A 1.0 V
Base-emitter saturation voltage IC=8A; IB=1.6A 1.5 V
Collector cut-off current VCB=400V; IE=0 10
Emitter cut-off current VEB=5V; IC=0 10
μA
μA
DC current gain IC=1.6A ; VCE=5V 10 50
DC current gain IC=8A ; VCE=5V 8
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2266
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
Loading...