Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC2260
DESCRIPTION
·High Power Dissipation: P
= 80W(Max.)@TC=25℃
C
·Collector-Emitter Breakdown Voltage: V
(BR)CEO
·Complement to Type 2SA980
APPLICATIONS
·Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(T
= 100V(Min.)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
CBO
V
CEO
V
EBO
I
C
I
B
P
T
T
stg
Collector-Base Voltage 160 V
Collector-Emitter Voltage 100 V
Emitter-Base Voltage 6 V
Collector Current-Continuous 8 A
B Base Current-Continuous 3 A
Collector Power Dissipation
C
j
=25℃
@T
C
Junction Temperature 150
Storage Temperature -65~150
80 W
℃
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC2260
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CE
I
I
h
CBO
EBO
FE
f
(sat)
T
Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 100 V
Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A B 1.5 V
Collector Cutoff Current VCB= 160V; IE= 0 1.0 mA
Emitter Cutoff Current VEB= 6V; IC= 0 1.0 mA
DC Current Gain IC= 3A; VCE= 4V 30
Current-Gain—Bandwidth Product IE= -0.5A; VCE= 12V 15 MHz
isc Website：www.iscsemi.cn
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