Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2258
DESCRIPTION ·
·With TO-126 package
·High transition frequency fT
·High collector-emitter voltage V
APPLICATIONS
·For high breakdown voltage general
amplification
·For video output amplification
PINNING
PIN DESCRIPTION
CEO
1
2
3 Base
Emitter
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage Open emitter 250 V
CBO
V
Collector- emitter voltage Open base 250 V
CEO
V
Emitter-base voltage Open collector 7 V
EBO
IC Collector current 0.1 A
ICM Collector current-peak 0.15 A
PC Collector power dissipation
℃)
T
=25℃
C
1.2*1
2
4*
W
Tj Junction temperature 150 ℃
T
Storage temperature -55～+150 ℃
stg
Note :*1: Without heat sink
*2: With a 100 × 100 × 2 mm A1 heat sink
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2258
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
I
Collector cutoff current VCE=250V;RBE=100kΩ 100 μA
CER
V
Emitter-base breakdown voltage IE=0.1mA ;IC=0 7 V
(BR)EBO
V
Collector-emitter saturation voltage IC=50mA ;IB=5m A 1.2 V
CEsat
V
Base-emitter voltage IC=40mA ; VCE=20V 1.2 V
BE
h
DC current gain IC=40mA ; VCE=20V 40
FE-1
h
DC current gain IC=5mA ; VCE=50V 30
FE-2
C
OB
fT Transition frequency IE=-10mA ; VCE=10V,f=200MHz 100 MHz
Output capacitance IE=0; VCB=50V;f=1MHz 3 4.5 pF
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2258
PACKAGE OUTLINE
3
Fig.2 Outline dimensions
Page 4
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2258
4
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