Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC2248
DESCRIPTION
·High Collector-Emitter Sustaining Voltage : V
CEO(SUS)
·High Switching Speed
APPLICATIONS
·Power switching
·Power amplification
·Power driver
ABSOLUTE MAXIMUM RATINGS(T
= 400V (Min)
=25℃)
a
SYMBOL PARAMETER MAX UNIT
V
CBO
V
CEO
V
EBO
IC Collector Current-Continuous 8 A
ICM Collector Current-Peak 16 A
IB Base Current-Continuous 3 A
PC
Tj Junction Temperature 175
Collector-Base Voltage 450 V
Collector-Emitter Voltage 400 V
Emitter-Base Voltage 5 V
Collector Power Dissipation
=25℃
@T
C
40 W
℃
T
Storage Temperature Range -65~175
stg
isc Website：www.iscsemi.cn
℃
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC2248
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CE
(sat)
V
BE
(sat)
hFE DC Current Gain IC= 3A; VCE= 5V 10
I
CBO
I
CEO
I
EBO
Switching Times
tr
Collector-Emitter Sustainig Voltage IC= 100mA; L= 25mH 400 V
Collector-Emitter Saturation Voltage I
Base-Emitter Saturation Voltage I
Collector Cutoff Current
Collector Cutoff Current VCE= 400V; IB= 0 5.0 mA
Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA
Rise Time 1.0
= 3A; IB= 0.6A 1.2 V
C
= 3A; IB= 0.6A 1.5 V
C
= 450V; IE= 0
V
CB
TC=125℃
1.0
4.0
mA
μs
t
stg
tf Fall Time
Storage Time 2.0
isc Website：www.iscsemi.cn
I
=3A; IB1=- IB2= 0.6A
C
μs
1.0
μs
Loading...