Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2246
DESCRIPTION
·With TO-3 package
·High voltage ,high speed
APPLICATIONS
·Power switching
·Power amplification
·power driver
PINNING (See Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 15 A
ICM Collector current-peak 30 A
IB Base current 6 A
PT Total power dissipation
Tj Junction temperature 200
Collector-base voltage Open emitter 450 V
Collector-emitter voltage Open base 400 V
Emitter-base voltage Open collector 5 V
T
=25℃
mb
100 W
℃
T
Storage temperature -65~200
stg
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
Thermal resistance from junction to mounting base 1.0
th j-mb
℃
℃/W
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2246
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CEsat
V
BEsat
I
CBO
I
CEO
I
EBO
hFE DC current gai n IC=6A ; VCE=5V 10
Switching times
ton Turn-on time 1.0
ts Storage time 2.0
Collector-emitter sustaining voltage IC=0.1A ; L=25mH 400 V
Collector-emitter saturation voltage IC=6A; IB=1.2A 1.2 V
Base-emitter saturation voltage IC=6A ;IB=1.2A 1.5 V
=450V; IE=0
V
Collector cut-off current
Collector cut-off current VCE=400V; IB=0 5.0 mA
Emitter cut-off current VEB=5V; IC=0 1.0 mA
CB
=125℃
T
C
=6A ;IB1=- IB2=1.2A
I
C
1
4
mA
μs
μs
tf Fall time
1.0
μs
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2246
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
Loading...