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INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC2242
DESCRIPTION
·High Breakdown Voltage : V
·High Current-Gain—Bandwidth Product-
: f
T
APPLICATIONS
·Power amplifier applications
·Color TV sound output applications
·Recommended for sound output stage in line operated TV
ABSOLUTE MAXIMUM RATINGS(T
= 300V(Min)
(BR)CBO
= 20MHz(Min)@IC= 20mA
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
P
T
CBO
CEO
EBO
I
C
I
B
C
T
J
stg
Collector-Base Voltage 300 V
Collector-Emitter Voltage 300 V
Emitter-Base Voltage 5 V
Collector Current-Continuous 150 mA
B Base Current-Continuous 50 mA
Collector Power Dissipation
=25℃
@ T
a
Collector Power Dissipation
@ TC=25℃
Junction Temperature 150 ℃
Storage Temperature Range -55~150 ℃
1.5
W
25
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC2242
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
I
V
(BR)CEO
Collector-Emitter Breakdown Voltage
= 5mA; IB= 0 B
C
300 V
V
CE
(sat)
V
BE
(on)
I
CBO
I
EBO
h
FE
C
OB
f
T
Collector-Emitter Saturation Voltage IC= 100mA; IB= 10mA 3.0 V
Base-Emitter On Voltage IC= 50mA ; VCE= 10V 0.9 V
Collector Cutoff Current VCB= 240V; IE=0 1.0
Emitter Cutoff Current VEB= 5V; IC=0 1.0
DC Current Gain IC= 50mA ; VCE= 10V 40 170
Output Capacitance
Current-Gain—Bandwidth Product IC= 20mA ; VCE= 50V 20 50 MHz
= 0 ; VCB= 50V; f
I
E
=1MHz
test
5.5 12 pF
μA
μA
isc Website：www.iscsemi.cn
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