Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC2239
DESCRIPTION
·Collector-Emitter Breakdown Voltage
: V
(BR)CEO
·Good Linearity of h
APPLICATIONS
·Power amplifier applications
·Driver stage amplifier applications
ABSOLUTE MAXIMUM RATINGS(T
=160V(Min)
FE
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
P
T
CBO
CEO
EBO
I
C
I
E
T
stg
Collector-Base Voltage 160 V
Collector-Emitter Voltage 160 V
Emitter-Base Voltage 5 V
Collector Current-Continuous 1.5 A
Emitter Current- Continuous -1.5 A
Total Power Dissipation
C
J
=25℃
@ T
C
Junction Temperature 150
Storage Temperature Range -55~150
25 W
℃
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC2239
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CE
V
BE
I
CBO
I
EBO
h
C
(sat)
FE
OB
f
T
(on)
Collector-Emitter Breakdown Voltage IC=10mA ; IB= 0 B 160 V
Emitter-Base Breakdown Voltage IE=1mA ; IC= 0 5 V
Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA 1.5 V
Base-Emitter On Voltage IC=0.5A ; VCE= 5V 1.0 V
Collector Cutoff Current VCB= 160V ; IE= 0 1.0 μA
Emitter Cutoff Current VEB=5V; IC= 0 1.0 μA
DC Current Gain IC=0.1A ; VCE=5V 70 240
Output Capacitance
Current-Gain—Bandwidth Product IC=0.1A;VCE=10V 100 MHz
hFE Classifications
I
= 0; VCB=10V; f
E
= 1MHz
test
25 pF
O Y
70-140 120-240
isc Website：www.iscsemi.cn
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