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r
r
r
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A
C
E
K
F
D
B
G
H
J
L
M
N
Elektronische Bauelemente
FEATURES
Complementary to 2SA965
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
2SC2235TM
0.8A , 120V
TO-92MOD
CLASSIFICATION OF h
FE
Product-Rank 2SC2235TM-O 2SC2235TM-Y
Range 80-160 120-240
Collector
Emitte
REF.
Millimeter Millimete
Min. Max.
A 5.50 6.50 H 1.70 2.05
B 8.00 9.00 J 2.70 3.20
C 12.70 14.50 K 0.85 1.15
D 4.50 5.30 L 1.60 Ma
E 0.35 0.65 M 0.00 0.40
F 0.30 0.51 N 4.00 Min
G 1.50 TYP.
Base
Emitte
Collector
Base
REF.
Min. Max.
ABSOLUTE MAXIMUM RATINGS (T
Parameter Symbol Rating Unit
Collector to Base Voltage V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Collector Current - Continuous IC 0.8 A
Collector Power Dissipation PC 0.9 W
Junction, Storage Temperature TJ, T
=25°C unless otherwise specified)
A
120 V
CBO
120 V
CEO
5 V
EBO
150, -55~150 °C
STG
ELECTRICAL CHARACTERISTICS (T
=25°C unless otherwise specified)
A
Parameter Symbol Min. Typ. Max. Unit Test Conditions
Collector to Base Breakdown Voltage V
Collector to Emitter Breakdown Voltage V
Emitter to Base Breakdown Voltage V
Collector Cut-Off Current I
Emitter Cut-Off Current I
DC Current Gain hFE 80 - 240 VCE=5V, IC=100mA
Collector to Emitter Saturation Voltage V
Base to Emitter Saturation Voltage VBE - - 1 V VCE=5V, IC=0.5A
Transition Frequency fT - 120 - MHz VCE=5V, IC=100mA
Collector Output Capacitance Cob - - 30 pF VCE=10V, IE=0, f=1MHz
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
26-Sep-2012 Rev. B Page 1 of 2
120 - - V IC=1mA, IE=0
(BR)CBO
120 - - V IC=10mA, IB=0
(BR)CEO
5 - - V IE=1mA, IC=0
(BR)EBO
- - 0.1 μA VCB=120V, IE=0
CBO
- - 0.1 μA VEB=5V, IC=0
EBO
- - 1 V IC=500mA, IB=50mA
CE(sat)
Page 2
Elektronische Bauelemente
CHARACTERISTIC CURVES
2SC2235TM
NPN Plastic Encapsulated Transistor
0.8A , 120V
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
26-Sep-2012 Rev. B Page 2 of 2
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