Page 1
2SC2216
G
K
0.05 A , 50 V
H
J
A
B
CE
Base
D
F
TO-92
Collector
Emitter
Base
Emitter
Collector
REF.
A 4.40 4.70
B 4.30 4.70
C 12.70 D 3.30 3.81
E 0.36 0.56
F 0.36 0.51
G 1.27 TYP.
H 1.10 J 2.42 2.66
K 0.36 0.76
Elektronische Bauelemente
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Amplifier dissipation NPN Silicon
ABSOLUTE MAXIMUM RATINGS (T
Parameter Symbol Rating Unit
Collector to Base Voltage V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Collector Current - Continuous IC 50 mA
Collector Power Dissipation PC 300 mW
Junction, Storage Temperature TJ, T
= 25°C unless otherwise specified)
A
50 V
CBO
45 V
CEO
4 V
EBO
125, -55~125 °C
STG
Millimeter
Min. Max.
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise specified)
A
Parameter Symbol Min. Typ. Max. Unit Test Conditions
Collector to Base Breakdown Voltage V
Collector to Emitter Breakdown Voltage V
Emitter to Base Breakdown Voltage V
Collector Cut – Off Current I
Emitter Cut – Off Current I
DC Current Gain hFE 40 - 140 VCE=12.5V, IC=12.5mA
Collector to Emitter Saturation Voltage V
Base to Emitter voltage V
Transition Frequency fT 300 - - MHz VCE=12.5V, IC=12.5mA
Collector Output Capacitance Cob - - 2 pF VCB=10V, IE=0, f=30MHz
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
17-Feb-2011 Rev. A Page 1 of 2
50 - - V IC=100μA, IE=0
(BR)CBO
45 - - V IC=10mA, IB=0
(BR)CEO
4 - - V IE=100μA, IC=0
(BR)EBO
- - 0.1 μA VCB=50V, IE=0
CBO
- - 0.1 μA VEB=3V, IC=0
EBO
- - 0.2 V IC=15mA, IB=1.5mA
CE(sat)
- - 1.5 V IC=15mA, IB=1.5mA
BE(sat)
Page 2
Elektronische Bauelemente
CHARACTERISTIC CURVES
2SC2216
NPN Plastic Encapsulated Transistor
0.05 A , 50 V
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
17-Feb-2011 Rev. A Page 2 of 2
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