Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC2168
DESCRIPTION
·Collector-Emitter Breakdown Voltage : V
·DC Current Gain: hFE= 60(Min)@ (VCE= 10V, IC= 0.7A)
APPLICATIONS
·Designed for TV vertical output ,audio output driver and
general purpose applications.
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER VALUE UNIT
(BR)CEO
= 200V(Min)
=25℃)
a
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
J
T
stg
Collector-Base Voltage 200 V
Collector-Emitter Voltage 200 V
Emitter-Base Voltage 6 V
Collector Current-Continuous 2 A
Base Current-Continuous 1 A
Collector Power Dissipation
=25℃
@T
C
Junction Temperature 150
Storage Temperature -55~150
30 W
℃
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC2168
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CE
(sat)
I
CBO
I
EBO
h
FE
C
OB
f
T
Switching Times
t
on
t
stg
Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0 200 V
Collector-Emitter Saturation Voltage IC= 0.7A; IB= 0.07A 1.0 V
Collector Cutoff Current VCB= 200V; IE= 0 10
Emitter Cutoff Current VEB= 6V; IC= 0 10
DC Current Gain IC= 0.7A; VCE= 10V 60
Output Capacitance IE= 0; VCB= 10V; f= 1MHz 35 pF
Current-Gain—Bandwidth Product IE= -0.2A ; VCE= 12V 15 MHz
Turn-On Time 1.0
Storage Time 3.0
= 1A; IB1= -IB2= 0.1A;
I
C
VCC= 20V; RL= 20Ω
μA
μA
μs
μs
t
f
Fall Time
isc Website：www.iscsemi.cn
2
1.5
μs
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