Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2167
DESCRIPTION
·With TO-220 package
·High collector-emitter breakdown voltage
: V
=150V(min)
CEO
APPLICATIONS
·Power amplifier applications
·TV vertical deflection applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 2 A
ICM Collector current-peak 3 A
PC Collector power dissipation
Collector-base voltage Open emitter 150 V
Collector-emitter voltage Open base 150 V
Emitter-base voltage Open collector 6 V
℃)
T
=25℃
C
30 W
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2167
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
V
Collector-emitter breakdown voltage IC=25mA ;IB=0 150 V
(BR)CEO
Collector-base breakdown voltage IC=0.5mA ;IE=0 150 V
(BR)CBO
Emitter-base breakdown voltage IE=0.5mA ;IC=0 6 V
(BR)EBO
V
Collector-emitter saturation voltage IC=0.5A ;IB=50m A 1.0 V
CEsat
I
Collector cut-off current VCB=150V;IE=0 10
CBO
I
Emitter cut-off current VEB=5V; IC=0 10
EBO
μA
μA
hFE DC current gain IC=0.1A ; VCE=5V 50
fT Transition frequency IC=0.1A ; VCE=10V 20 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2167
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
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