Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC2140
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
(BR)CEO
= 350V (Min)
=25℃)
a
: V
·High Switching Speed
APPLICATIONS
·Switching regulator and high voltage switching applications.
·High speed DC-DC converter applications.
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER MAX UNIT
V
V
V
T
CBO
CEO
EBO
I
C
I
B
P
C
T
stg
Collector-Base Voltage 500 V
Collector-Emitter Voltage 350 V
Emitter-Base Voltage 6 V
Collector Current-Continuous 10 A
B Base Current-Continuous 2 A
Collector Power Dissipation
=25℃
@T
C
Junction Temperature 150
j
Storage Temperature Range -65~150
100 W
℃
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC2140
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CE
(sat)
V
BE
(sat)
h
FE
I
CBO
I
EBO
Switching Times
Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 350 V
Collector-Base Breakdown Voltage IC= 1mA; IE= 0 500 V
Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 6 V
Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 1.5 V
Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 2.0 V
DC Current Gain IC= 5A; VCE= 5V 10
Collector Cutoff Current VCB= 400V; IE= 0 0.1 mA
Emitter Cutoff Current VEB= 6V; IC= 0 1.0 mA
t
r
t
stg
t
f
Rise Time 1.0
Storage Time 2.0
Fall Time
isc Website：www.iscsemi.cn
= 200V; IB1= -IB2= 0.5A;
V
CC
RL= 40Ω
μs
μs
1.0
μs
Loading...