Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2123
DESCRIPTION
·With TO-3 package
·Short switching times.
·High dielectric strength.
APPLICATIONS
·For use in TV horizontal deflection stage
PINNING(see fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 12 A
PT Total power dissipation TC=25℃ 50 W
Tj Junction temperature 175 ℃
Collector-base voltage Open emitter 1000 V
Collector-emitter voltage Open base 400 V
Emitter-base voltage Open collector 7 V
T
Storage temperature -55~175 ℃
stg
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2123
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
Collector-emitter breakdown voltage IC=50mA; IB=0; 400 V
Emitter-base breakdown voltage IE=1mA; IC=0; 7 V
Collector-emitter saturation voltage IC=10A;IB=2.5 A 3.3 V
Base-emitter saturation voltage IC=10A;IB=2.5 A 2.2 V
Collector cut-off current VCB=1000V;IE=0 1.0 mA
Emitter cut-off current VEB=7V;IC=0 1.0 mA
DC current gain IC=8A ; VCE=5V 5
fT Transition frequency IC=0.5A ; VCE=10V 6 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2123
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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