Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2085
DESCRIPTION
·With TO-220 package
·High breakdown voltage
·High transition frequency
APPLICATIONS
·For line-operated AF amplifier and
chrominance output applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 0.1 A
ICM Collector current-peak 0.15 A
PC Collector power dissipation
Collector-base voltage Open emitter 300 V
Collector-emitter voltage Open base 300 V
Emitter-base voltage Open collector 5 V
T
=25℃
C
10 W
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2085
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
V
CEsat
Collector-base breakdown voltage IC=100μA ;IE=0 300 V
Collector-emitter breakdown voltage IC=1mA ;IB=0 300 V
Emitter-base breakdown voltage IE=100μA ;IC=0 5 V
Collector-emitter saturation voltage IC=100mA ;IB=10mA 5.0 V
VBE Base-emitter on voltage IC=50mA ; VCE=10V 1.2 V
I
Collector cut-off current VCE=300V;IB=0 20 μA
CEO
I
Collector cut-off current VCB=300V;IE=0 10 μA
CBO
I
Emitter cut-off current VEB=5V; IC=0 10 μA
EBO
h
DC current gain IC=10mA ; VCE=10V 30
FE-1
h
DC current gain IC=50mA ; VCE=10V 30 150
FE -2
COB Output capacitance IE=0; VCB=30V;f=1MHz 8 pF
fT Transition frequency IC=20mA ; VCE=30V 55 MHz
h
30-60 50-100 80-150
classifications
FE-2
P Q R
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2085
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
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