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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2022
DESCRIPTION ·
·With TO-220C package
·High voltage
APPLICATIONS
·Series regulator, switch, and general
purpose applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 1 A
PC Collector dissipation TC=25℃ 30 W
Collector-base voltage Open emitter 300 V
Collector-emitter voltage Open base 300 V
Emitter-base voltage Open collector 6 V
℃)
Tj Junction temperature 150 ℃
T
Storage temperature -50~150 ℃
stg
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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2022
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
I
CBO
I
EBO
Collector-emitter breakdown voltage IC=25mA ; IB=0 300 V
Collector-base breakdown voltage IC=1mA ; IE=0 300 V
Emitter-base breakdown voltage IE=1mA ; IC=0 6 V
Collector-emitter saturation voltage IC=500mA; IB=100mA 1.0 V
Collector cut-off current VCB=300V ;IE=0 1.0 mA
Emitter cut-off current VEB=6V; IC=0 1.0 mA
hFE DC current gai n IC=200m A ; VCE=4V 30
fT Transition frequency IC=100mA ; VCE=12V 10 MHz
2
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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2022
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
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