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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1953
DESCRIPTION ·
·With TO-126 package
·Complement to type 2SA914
·High V
APPLICATIONS
·For low-frequency power pre-amplification
PINNING
PIN DESCRIPTION
CEO
1
2
3 Base
Emitter
Collector;connected to
mounting base
Absolute Maximun Ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 50 mA
ICM Collector current-peak 100 mA
PC Collector power dissipation 1.2 W
Collector-base voltage Open emitter 150 V
Collector-emitter voltage Open base 150 V
Emitter-base voltage Open collector 5 V
℃)
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1953
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CEsat
I
CBO
hFE DC current gai n IC=10mA ; VCE=5V 130 330
COB Output capacitance IE=0 ; VCB=10V;f=1MHz 3 pF
fT Transition frequency IE=-10mA ; VCB=10V 70 MHz
Collector-emitter breakdown voltage IC=0.1mA;IB=0 150 V
I
Emitter-base breakdown voltage
Collector-emitter saturation voltage IC=30mA ;IB=3mA 1 V
Collector cut-off current VCB=100V; IE=0 1
=10μA ;IC=0
E
5 V
μA
hFE Classifications
R S
130-220 185-330
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1953
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
Page 4
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1953
4
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