Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1905
DESCRIPTION ·
·With TO-220C package
·High breakdown voltage
·Large collector power dissipation
APPLICATIONS
·Color TV horizontal deflection
driver
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 200 mA
ICM Collector current-peak 400 mA
PC Collector power dissipation
Collector-base voltage Open emitter 350 V
Collector-emitt er voltage Open base 300 V
Emitter-base voltage Open collector 7.5 V
℃)
T
=25℃
C
15 W
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1905
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
I
CBO
I
EBO
h
FE
fT Transition frequency IC=10m A ; VCE=30V 50 MHz
COB Output capacitance IE=0 ; VCB=50V; f=1MHz 4.5 pF
t
stg
Collector-emitter breakdown voltage IC=5mA ; IB=0 300 V
Collector-base breakdown voltage IC=100μA ; IE=0 350 V
Emitter-base breakdown voltage IE=100μA ; IC=0 7.5 V
Collector-emitter saturation voltage IC=50mA; IB=5mA 1.0 V
Collector cut-off current VCB=200V ;IE=0 2 μA
Emitter cut-off current VEB=5V; IC=0 2 μA
DC current gain IC=10m A ; VCE=10V 40 250
Storage time IC=100mA; IB1=10mA; IB2=0 5 7.5 μs
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1905
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
Loading...