Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1895
DESCRIPTION
·With TO-3 package
·High breakdown voltage
·Low collector saturation voltage
APPLICATIONS
·For color TV horizontal output applications
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 6 A
PC Collector power dissipation TC=25℃ 50 W
Collector-base voltage Open emitter 1500 V
Collector-emitter voltage Open base 600 V
Emitter-base voltage Open collector 5 V
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1895
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
(BR)EBO
V
V
Collector-emitter sustaining voltage IC=0.1A ;IB=0 600 V
Emitter-base breakdown voltage IE=1mA ;IC=0 5 V
Collector-emitter saturation voltage IC=5A; IB=1A 5.0 V
CEsat
Base-emitter saturation voltage IC=5A; IB=1A 1.5 V
BEsat
I
Collector cut-off current VCB=750V; IE=0 10 μA
CBO
I
Emitter cut-off current VEB=5V; IC=0 10 μA
EBO
h
DC current gain IC=2A ; VCE=10V 8 30
FE
fT Transition frequency IC=0.1A ; VCE=10V 2 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1895
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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