Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1881
DESCRIPTION
·With TO-220C package
·DARLINGTON
·High DC current gain
APPLICATIONS
·High gain amplifier power switching
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings(Tc=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current-DC 3 A
ICM Collector current-Pulse 6 A
PC Collector power dissipation
Collector-base voltage Open emitter 60 V
Collector-emitter voltage Open base 60 V
Emitter-base voltage Open collector 7 V
℃)
T
=25℃
C
30 W
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1881
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
I
V
CEO(SUS)
Collector-emitter sustaining voltage
=50mA,RBE=∞
C
60 V
V
Emitter-base breakdown voltage IE=50mA, IC=0 7 V
(BR)EBO
V
Collector-emitter saturation voltage IC=2.5A ,IB=20mA 1.2 V
CEsat
I
Collector cut-off current VCB=60V, IE=0 0.2 mA
CBO
V
I
Collector cut-off current
CEO
h
DC current gain IC=1.5A ; VCE=1.5V 1000
FE-1
h
DC current gain IC=2.5A ; VCE=1.5V 500
FE-2
ton Turn-on time 1
t
Turn-off time
off
=30V, ,RBE=∞
CE
=11V, IC=2A
V
CC
=-IB2=8mA
I
B1
0.4 mA
μs
5
μs
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1881
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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