Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1880
DESCRIPTION
·With TO-220C package
·DARLINGTON
·High DC current gain
APPLICATIONS
·For industrial use
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings(Tc=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current-DC 2 A
ICM Collector current-Pulse 4 A
PC Collector power dissipation
Collector-base voltage Open emitter 120 V
Collector-emitter voltage Open base 120 V
Emitter-base voltage Open collector 5 V
℃)
T
=25℃
C
15 W
Tj Junction temperature 150
T
Storage temperature -65~150
stg
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1880
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
V
Collector-emitter sustaining voltage IC=30mA, IB=0 120 V
CEO(SUS)
(BR)CBO
(BR)EBO
V
CEsat
I
CBO
I
CEO
I
EBO
h
FE
Collector-base breakdown voltage IC=1mA, IE=0 120 V
Emitter-base breakdown voltage IE=50mA, IC=0 5 V
Collector-emitter saturation voltage IC=2A ,IB=8mA 1.2 V
Collector cut-off current VCB=100V, IE=0 0.1 mA
Collector cut-off current VCE=100V, IB=0 0.1 mA
Emitter cut-off current VEB=5V; IC=0 50 mA
DC current gain IC=2A ; VCE=2V 1000
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1880
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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