Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1868
DESCRIPTION
·With TO-3 package
·Wide area of safe operation
·High voltage ,high speed
APPLICATIONS
·For switching regulator application
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 7 A
PC Collector power dissipation TC=25℃ 80 W
Tj Junction temperature 150 ℃
Collector-base voltage Open emitter 450 V
Collector-emitter voltage Open base 400 V
Emitter-base voltage Open collector 7 V
℃)
T
Storage temperature -55~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1868
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
Collector-emitter breakdown voltage IC=10mA ;IB=0 400 V
Collector-base breakdown voltage IC=1mA ;IE=0 450 V
Emitter-base breakdown voltage IE=1mA ;IC=0 7 V
Collector-emitter saturation voltage IC=4A; IB=0.8A 1.0 V
Base-emitter saturation voltage IC=4A; IB=0.8A 1.5 V
Collector cut-off current VCB=450V; IE=0 100 μA
Emitter cut-off current VEB=7V; IC=0 100 μA
DC current gain IC=1A ; VCE=5V 15 50
DC current gain IC=5A ; VCE=5V 10
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1868
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
Loading...