Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1863
DESCRIPTION
·With TO-66 package
·Continuous collector current-I
·Power dissipation –P
=40W @TC=25℃
C
APPLICATIONS
·Designed for general-purpose amplifier
and switching applications
PINNING (See Fig.2)
PIN DESCRIPTION
=7A
C
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 7 A
PT Total power dissipation
Tj Junction temperature 150
Collector-base voltage Open emitter 150 V
Collector-emitter voltage Open base 100 V
Emitter-base voltage Open collector 7 V
℃)
T
=25℃
C
40 W
℃
T
Storage temperature -55~150
stg
℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1863
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
(BR)EBO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
Collector-emitter sustaining voltage IC=100mA ; IB=0 100 V
Emitter-base breakdown voltage IE=1mA ; IC=0 7 V
Collector-emitter saturation voltage IC=1A ;IB=0.1A 0.5 V
Base-emitter on voltage IC=1A ; VCE=2V 1.0 V
Collector cut-off current VCB=150V; IE=0 100
Emitter cut-off current VEB=7V; IC=0 100
μA
μA
DC current gain IC=3A ; VCE=5V 20
DC current gain IC=5A ; VCE=5V 15
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1863
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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