Page 1
Power Transistors
2SC1847
Silicon NPN epitaxial planar type
For medium output power amplification
Complementary to 2SA0886
■ Features
• Output of 4 W can be obtained by a complementary pair with
2SA0886
• TO-126B package which requires no insulation plate for installation to the heat sink
φ 3.16
±0.1
8.0
+0.5
–0.1
±0.3
3.8
±0.1
1.9
±0.5
11.0
±1.0
16.0
Unit: mm
3.2
±0.2
±0.1
3.05
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
Collector-emitter voltage (Base open) V
Emitter-base voltage (Collector open) V
Collector current I
Peak collector current I
Collector power dissipation P
Junction temperature T
Storage temperature T
CBO
CEO
EBO
C
CP
C
j
−55 to +150 °C
stg
50 V
40 V
5V
1.5 A
3A
1.2 W
150 °C
0.75
±0.1
4.6
±0.2
123
0.5
±0.1
0.5
2.3
±0.2
TO-126B-A1 Package
±0.1
1: Emitter
2: Collector
3: Base
1.76
±0.1
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
Collector-emitter voltage (Base open) V
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
*
Collector-emitter saturation voltage V
Base-emitter saturation voltage V
CBOIC
CEOIC
I
CBO
I
CEO
I
EBO
h
FE
CE(sat)IC
BE(sat)IC
Transition frequency f
Collector output capacitance C
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Rank Q R
h
FE
80 to 160 120 to 220
= 1 mA, IE = 050V
= 2 mA, IB = 040V
VCB = 20 V, IE = 01µA
VCE = 10 V, IB = 0 100 µA
VEB = 5 V, IC = 010µA
VCE = 5 V, IC = 1 A 80 220
= 2 A, IB = 0.2 A 1 V
= 2 A, IB = 0.2 A 1.5 V
VCB = 5 V, IE = − 0.5 A, f = 200 MHz 150 MHz
T
VCB = 20 V, IE = 0, f = 1 MHz 35 pF
ob
Publication date: February 2003 SJD00095BED
1
Page 2
2SC1847
PC T
1.6
)
W
(
C
1.2
0.8
0.4
a
Collector power dissipation P
0
0 16040 12080
Ambient temperature Ta (°C
V
I
(V)
BE(sat)
BE(sat)
10
1
0.1
TC=–25˚C
C
100˚C
25˚C
Base-emitter saturation voltage V
0.01
0.01 10.1
Collector current IC (A)
IC/IB=10
IC V
hFE I
TC=100˚C
25˚C
–25˚C
CE
IB=40mA
35mA
C
TC=25˚C
30mA
25mA
20mA
VCE=5V
15mA
10mA
5mA
1
(V)
CE(sat)
0.1
0.01
Collector-emitter saturation voltage V
0.001
0.01
240
200
(MHz)
160
T
120
80
Transition frequency f
40
0
−0.01 −0.1 −1 −10
4.0
3.5
3.0
(A)
C
2.5
2.0
1.5
Collector current I
1.0
0.5
0
01024 86
)
Collector-emitter voltage VCE (V)
1000
FE
100
10
Forward current transfer ratio h
1
0.01 10.1
Collector current IC (A)
V
I
CE(sat)
25˚C
0.1 1
C
TC=100˚C
–25˚C
Collector current IC (A)
fT I
E
VCB=5V
f=200MHz
T
=25˚C
C
Emitter current IE (A)
IC/IB=10
Cob V
120
(pF)
ob
100
C
80
60
40
20
Collector output capacitance
(Common base, input open circuited)
0
1
CB
10 100
Collector-base voltage VCB (V)
2
IE=0
f=1MHz
T
=25˚C
C
V
R
60
50
(V)
CER
V
40
30
20
10
Collector-emitter voltage
(Resistor between B and E)
0
0.001 0.01 0.1 1 10
CER
BE
Base-emitter resistance RBE (kΩ)
SJD00095BED
TC=25˚C
)
T
(
I
a
CBO
1000
I
)
100
= 25°C
a
T
(
CBO
I
10
1
0 10080604020
Ambient temperature Ta (°C)
CBO
T
a
VCB=20V
Page 3
Safe operation area Rth t
10
I
CP
Single pulse
T
=25˚C
C
4
10
2SC1847
(1)Without heat sink
(2)With a 100×100×2mm Al heat sink
t=10ms
t=1s
(A)
C
I
C
1
0.1
Collector current I
0.01
0.001
0.1 1 10 100
Collector-emitter voltage VCE (V)
3
10
(°C/W)
th
2
10
10
Thermal resistance R
1
−1
10
−4
10
−3
10
(1)
(2)
4
3
−1
−2
10
10110
2
10
10
10
Time t (s)
SJD00095BED
3
Page 4
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteris-
tics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL
Page 5
This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.
Loading...