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Power Transistors
2SC1846
Silicon NPN epitaxial planar type
For medium output power amplification
Complementary to 2SA0885
■ Features
• Low collector-emitter saturation voltage V
• Output of 3 W can be obtained by a complementary pair with
2SA0885
• TO-126B package which requires no insulation plate for installation to the heat sink
CE(sat)
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
Collector-emitter voltage (Base open) V
Emitter-base voltage (Collector open) V
Collector current I
Peak collector current I
Collector power dissipation P
CBO
CEO
EBO
C
CP
C
Junction temperature T
Storage temperature T
stg
Note)*: With a 100 × 100 × 2 mm Al heat sink
j
45 V
35 V
5V
1A
1.5 A
1.2 W
*
5.0
150 °C
−55 to +150 °C
φ 3.16
±0.1
0.75
+0.5
8.0
–0.1
±0.1
4.6
±0.2
123
±0.5
±0.3
11.0
3.8
±0.1
1.9
±1.0
16.0
0.5
±0.1
0.5
2.3
±0.2
TO-126B-A1 Package
±0.1
1: Emitter
2: Collector
3: Base
Unit: mm
3.2
±0.2
±0.1
3.05
1.76
±0.1
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
Collector-emitter voltage (Base open) V
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio h
Collector-emitter saturation voltage V
CBOIC
CEOIC
I
CBO
I
CEO
I
EBO
FE1
h
FE2
CE(sat)IC
Transition frequency f
Collector output capacitance C
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Rank Q R S
h
FE1
Publication date: February 2003 SJD00094BED
85 to 170 120 to 240 170 to 340
= 1 mA, IE = 045V
= 2 mA, IB = 035V
VCB = 20 V, IE = 0 0.1 µA
VCE = 20 V, IB = 0 100 µA
VEB = 5 V, IC = 010µA
*
VCE = 10 V, IC = 500 mA 85 340
VCE = 5 V, IC = 1 A 50
= 500 mA, IB = 50 mA 0.5 V
VCB = 10 V, IE = −50 mA, f = 200 MHz 200 MHz
T
VCB = 10 V, IE = 0, f = 1 MHz 20 pF
ob
1
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2SC1846
6
)
5
W
(
C
4
3
2
1
Collector power dissipation P
0
0 20040 80 160120
)
V
(
1
CE(sat)
0.1
(1)With a 100×100×2mm
Al heat sink
(2)Without heat sink
(1)
(2)
Ambient temperature Ta (°C
V
I
CE(sat)
TC=100˚C
25˚C
PC T
a
1.50
1.25
)
A
(
1.00
C
0.75
0.50
Collector current I
0.25
0
01024 86
)
C
IC/IB=10
–25˚C
Collector-emitter voltage VCE (V
)
10
V
(
BE(sat)
1
IC V
V
BE(sat)
TC=–25˚C
25˚C
100˚C
CE
I
TC=25˚C
IB=10mA
C
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
IC/IB=10
1.2
VCE=10V
Ta=25˚C
1.0
)
A
(
0.8
C
0.6
0.4
Collector current I
0.2
0
)
012210486
1000
FE
100
IC I
B
Base current IB (mA
hFE I
C
TC=100˚C
25˚C
–25˚C
)
VCE=10V
0.01
Collector-emitter saturation voltage V
0.001
0.01
0.1 1
Collector current IC (A
fT I
200
VCB=10V
f=200MHz
T
=25˚C
C
)
160
MHz
(
T
120
80
40
Transition frequency f
0
−1 −10 −100
E
Emitter current IE (mA
0.1
10
Forward current transfer ratio h
Base-emitter saturation voltage V
0.01
0.01 10.1
)
Collector current IC (A
Cob V
50
(pF)
ob
C
40
30
20
10
Collector output capacitance
(Common base, input open circuited)
0
1 10 100
)
Collector-base voltage VCB (V
CB
)
IE=0
f=1MHz
T
=25˚C
C
)
1
0.01 10.1
Collector current IC (A
V
R
100
(V)
80
CER
V
60
40
20
Collector-emitter voltage
(Resistor between B and E)
0
0.1 1 10 100
CER
Base-emitter resistance RBE (kΩ
BE
)
IC=10mA
T
=25˚C
C
)
2
SJD00094BED
Page 3
)
T
(
I
a
CBO
)
= 25°C
T
(
I
a
CBO
2SC1846
I
T
4
10
3
10
2
10
10
CEO
a
VCE=10V
)
A
(
C
Collector current I
Safe operation area
10
I
CP
1
I
C
0.1
0.01
t=1s
Single pulse
T
=25˚C
C
t=10ms
1
0 16040 12080
Ambient temperature Ta (°C
0.001
0.1
)
Collector-emitter voltage VCE (V
1 10 100
)
SJD00094BED
3
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Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
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Consult our sales staff in advance for information on the following applications:
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the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
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permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL
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