Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1828
DESCRIPTION
·With TO-66 package
·Continuous collector current-I
·Power dissipation –P
=40W @TC=25℃
C
APPLICATIONS
·For power amplifier applications
PINNING (See Fig.2)
PIN DESCRIPTION
=1A
C
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 1 A
PT Total power dissipation
Tj Junction temperature 150
Collector-base voltage Open emitter 800 V
Collector-emitter voltage Open base 400 V
Emitter-base voltage Open collector 6 V
℃)
T
=25℃
C
40 W
℃
T
Storage temperature -55~150
stg
℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1828
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
Collector-emitter sustaining voltage IC=100mA ; IB=0 400 V
Collector-base breakdown voltage IC=1mA ; IE=0 800 V
Emitter-base breakdown voltage IE=1mA ; IC=0 6 V
Collector-emitter saturation voltage IC=1A; IB=0.2A 1.0 V
Base-emitter saturation voltage IC=1A; IB=0.2A 1.5 V
Collector cut-off current VCB=800V; IE=0 0.1 mA
Emitter cut-off current VEB=6V; IC=0 0.1 mA
hFE DC current gai n IC=0.2A ; VCE=10V 30 200
fT Transition frequency IC=0.1A ; VCE=10V 10 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1828
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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