Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1826
DESCRIPTION
·With TO-220 package
·Collector current :I
·Collector power dissipation
=30W@TC=25℃
:P
C
APPLICATIONS
·For use in low frequency power
amplifier applications
PINNING
PIN DESCRIPTION
=4A
C
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current (DC) 4 A
PC Collector power dissipation
Tj Junction temperature 150
Collector-base voltage Open emitter 80 V
Collector-emitter voltage Open base 60 V
Emitter-base voltage Open collector 6 V
T
=25℃
C
30 W
℃
T
Storage temperature -55~150
stg
℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1826
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
Collector-emitter breakdown voltage IC=25mA ;IB=0 60 V
Collector-base breakdown voltage IC=1mA ;IE=0 80 V
Emitter-base breakdown voltage IE=1mA ;IC=0 6 V
Collector-emitter saturation voltage IC=3A; IB=0.3A 1.0 V
Base-emitter saturation voltage IC=3A ;IB=0.3A 1.5 V
Collector cut-off current VCB=80V;IE=0 100 μA
Emitter cut-off current VEB=6V; IC=0 100 μA
hFE DC current gain IC=1A ; VCE=4V 40 320
fT Transition frequency IC=0.5A ; VCE=12V 10 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1826
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
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