Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1819M
DESCRIPTION
·With TO-220 package
·High V
·Large P
APPLICATIONS
·For use in line-operated color TV chroma
output circuits.
PINNING
PIN DESCRIPTION
CEO
C
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 0.1 A
ICM Collector current-peak 0.2 A
PC Collector power dissipation TC=25℃ 15 W
Collector-base voltage Open emitter 300 V
Collector-emitter voltage Open base 300 V
Emitter-base voltage Open collector 7 V
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1819M
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
V
CEsat
V
BE
h
FE-1
h
FE-2
Collector-base breakdown voltage IC=100μA ;IE=0 300 V
Collector-emitter breakdown voltage IC=100A ;IB=0 300 V
Emitter-base breakdown voltage IE=100μA ;IC=0 7 V
Collector-emitter saturation voltage IC=50mA ;IB=5mA 1.5 V
Base-emitter on voltage IC=30mA ; VCE=10V 1.2 V
DC current gain IC=5mA ; VCE=50V 50 250
DC current gain IC=30mA ; VCE=10V 30
COB Output capacitance IE=0; VCB=30V;f=1MHz 5 pF
fT Transition frequency IC=20mA ; VCE=30V 70 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1819M
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
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