Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1785
DESCRIPTION
·With TO-3 package
·High power dissipation
APPLICATIONS
·Power amplifier applications
·Power switching applications
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 15 A
IB Base current 4 A
PC Collector power dissipation TC=25℃ 100 W
Collector-base voltage Open emitter 200 V
Collector-emitter voltage Open base 200 V
Emitter-base voltage Open collector 6 V
℃)
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1785
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
Collector-emitter breakdown voltage IC=50mA ;IB=0 200 V
Emitter-base breakdown voltage IE=1mA ;IC=0 6 V
Collector-emitter saturation voltage IC=10A; IB=1A 2.0 V
Base-emitter saturation voltage IC=10A; IB=1A 2.5 V
Collector cut-off current VCB=200V; IE=0 100 μA
Emitter cut-off current VEB=6V; IC=0 100 μA
hFE DC current gai n IC=5A ; VCE=4V 20
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1785
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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