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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1783
DESCRIPTION
·With TO-3 package
·High power dissipation
·High speed ,high current
APPLICATIONS
·For power amplifier applications
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 10 A
PC Collector power dissipation
Tj Junction temperature 150
Collector-base voltage Open emitter 180 V
Collector-emitter voltage Open base 120 V
Emitter-base voltage Open collector 6 V
℃)
T
=25℃
C
100 W
℃
T
Storage temperature -55~150
stg
℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1783
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
Collector-emitter breakdown voltage IC=50mA ;IB=0 120 V
Emitter-base breakdown voltage IE=1mA ;IC=0 6 V
Collector-emitter saturation voltage IC=5A; IB=0.5A 1.5 V
Base-emitter saturation voltage IC=5A; IB=0.5A 2.0 V
Collector cut-off current VCB=180V; IE=0 100 μA
Emitter cut-off current VEB=6V; IC=0 100 μA
hFE DC current gai n IC=3A ; VCE=4V 30
COB Collector output capacitance IE=0 ; VCB=10V;f=1MHz 165 pF
fT Transition frequency IC=1A ; VCE=10V 10 MHz
2
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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1783
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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