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INCHANGE Semiconductor isc RF Product Specification
isc Silicon NPN RF Transistor 2SC1730
DESCRIPTION
·Low Base Time Constant;
r
bb’ • CC
·High Gain Bandwidth Product
f
= 1100 MHz TYP.
T
·Low Output Capacitance;
C
= 1.5 pF Max.
OB
APPLICATIONS
·Designed for TV VHF, UHF tuner oscillator applications.
ABSOLUTE MAXIMUM RATINGS(T
= 10 ps TYP.
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
P
T
CBO
CEO
EBO
I
C
T
stg
Collector-Base Voltage 30 V
Collector-Emitter Voltage 15 V
Emitter-Base Voltage 5 V
Collector Current-Continuous 50 mA
Collector Power Dissipation
C
J
=25℃
@T
C
Junction Temperature 125 ℃
Storage Temperature Range -55~125 ℃
0.25 W
isc Website：www.iscsemi.cn
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INCHANGE Semiconductor isc RF Product Specification
isc Silicon NPN RF Transistor 2SC1730
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CE(
I
CBO
h
FE
f
T
C
OB
r
• C
bb’
Collector-Emitter Saturation Voltage IC= 10mA ; IB= 1mA 0.5 V
)
sat
Collector Cutoff Current VCB= 12V; IE= 0 0.1
DC Current Gain IC= 5mA ; VCE= 10V 40 180
Current-Gain—Bandwidth Product IE= -5mA ; VCE= 10V 800 1100 MHz
Output Capacitance IE= 0 ; VCB= 10V; f= 1.0MHz 1.5 pF
Base Time Constant VCE= 10V,IE = -5mA,f = 31.9 MHz 10 15 ps
C
h
Classifications
FE
Marking M L K
h
FE
40-80 60-120 90-180
μA
isc Website：www.iscsemi.cn
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