Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1723
DESCRIPTION ·
·With TO-220C package
·High breakdown voltage
·High transition frequency
APPLICATIONS
·Low frequency high voltage
power amplifier
·TV power supply driver
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 0.2 A
PC Collector power dissipation
Collector-base voltage Open emitter 300 V
Collector-emitter voltage Open base 300 V
Emitter-base voltage Open collector 5 V
℃)
T
=25℃
C
15 W
Tj Junction temperature 150
T
Storage temperature -45~150
stg
℃
℃
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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1723
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
Collector-emitter breakdown voltage IC=5mA ; RBE=∞ 300 V
Collector-base breakdown voltage IC=100μA ; IE=0 300 V
Emitter-base breakdown voltage IE=100μA ; IC=0 5 V
Collector-emitter saturation voltage IC=100mA; IB=10mA 0.32 1.5 V
VBE Base-emitter on voltage IC=50m A ; VCE=10V 0.66 0.9 V
I
Collector cut-off current VCB=250V ;IE=0 0.1 μA
CBO
I
Collector cut-off current VCE=250V; RBE=∞ 2 μA
CEO
h
DC current gain IC=50m A ; VCE=10V 40 200
FE
fT Transition frequency IC=30m A ; VCE=20V 60 MHz
COB Output capacitance IE=0 ; VCB=50V; f=1MHz 6.2 pF
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1723
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
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