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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1683
DESCRIPTION ·
·With TO-220C package
·Complement to type 2SA843
·High breakdown voltage
·Large collector power dissipation
APPLICATIONS
·Audio frequency power amplifier
·Color TV vertical deflection output
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 500 mA
ICM Collector current-peak 2 A
PT Total power dissipation TC=25℃ 20 W
Collector-base voltage Open emitter 200 V
Collector-emitter voltage Open base 150 V
Emitter-base voltage Open collector 5 V
℃)
Tj Junction temperature 150 ℃
T
Storage temperature -50~150 ℃
stg
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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1683
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
Collector-emitter breakdown voltage IC=5mA ; IB=0 150 V
Collector-base breakdown voltage IC=0.5mA ; IE=0 200 V
Emitter-base breakdown voltage IE=0.5mA ; IC=0 5 V
Collector-emitter saturatio n voltage IC=500mA; IB=50mA 1.0 V
VBE Base-emitter on voltage IC=400m A ; VCE=10V 1.0 V
I
Collector cut-off current VCB=200V ;IE=0 50 μA
CBO
I
Emitter cut-off current VEB=4V; IC=0 50 μA
EBO
h
DC current gain IC=400m A ; VCE=10V 60 200
FE
hFE Classifications
P Q
60-140 85-200
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1683
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
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