Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1667
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
·Excellent safe operating area
APPLICATIONS
·For use in high power audio amplifier
applications and high voltage switching
regulator circuits
PINNING
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 4 A
PD Total Power Dissipation TC=75℃ 50 W
Tj Junction temperature 175 ℃
Collector-base voltage Open emitter 90 V
Collector-emitter voltage Open base 90 V
Emitter-base voltage Open collector 7 V
℃)
T
Storage temperature -55~175 ℃
stg
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1667
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
(BR)EBO
V
CEsat
V
BE sat
I
CBO
I
EBO
Collector-emitter sustaining voltage IC=50mA ;IB=0 90 V
Emitter-base breakdown voltage IE=1mA ;IC=0 7 V
Collector-emitter saturation voltage IC=3A; IB=0.3A 1.0 V
Base-emitter saturation voltage IC=3A; IB=0.3A 1.5 V
Collector cut-off current VCB=90V; IE=0 0.1 mA
Emitter cut-off current VEB=7V; IC=0 0.1 mA
hFE DC current gain IC=1A ; VCE=4V 40 200
fT Transition frequency IC=0.5A ; VCE=10V 10 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1667
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
3
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