Page 1
1
Base
2
Emitter
3
Top View
A
L
C B
D
G
H J
F
K E
1
2
3
1
2
3
Millimeter
Millimeter
Elektronische Bauelemente
FEATURE
High DC current gain :hFE=200(Typ), VCE=6V, IC=1mA.
High Voltage:V
CEO
=50V.
CLASSIFICATION OF hFE
Product-Rank 2SC1623K-P 2SC1623K-Y 2SC1623K-G 2SC1623K-B
Range 90~180 135~270 200~400 300~600
NPN Epitaxial Planar Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
2SC1623K
0.1A , 60V
SOT-23
Marking Code
L4 L5 L6 L7
PACKAGE INFORMATION
Package MPQ LeaderSize
SOT-23 3K 7’ inch
REF.
Min. Max.
A 2.80 3.04 G 0.09 0.18
B 2.10 2.55 H 0.45 0.60
C 1.20 1.40 J 0.08 0.177
D 0.89 1.15 K 0.6 REF.
E 1.78 2.04 L 0.89 1.02
F 0.30 0.50
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Ratings Unit
Collector to Base Voltage V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Collector Current - Continuous IC 100 mA
Collector Power Dissipation PC 200 mW
Junction, Storage Temperature TJ, T
(TA = 25°C unless otherwise specified)
60 V
CBO
50 V
CEO
5 V
EBO
150, -55 ~ 150 °C
STG
REF.
Collector
Min. Max.
ELECTRICAL CHARACTERISTICS
Parameter Symbol Min. Typ. Max. Unit
Collector to Base Breakdown Voltage V
Collector to Emitter Breakdown Voltage V
Emitter to Base Breakdown Voltage V
Collector Cut-Off Current I
Emitter Cut-Off Current I
DC Current Gain hFE 90 200 600 VCE=6V, IC=1mA
Collector to Emitter Saturation Voltage V
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
28-Jan-2011 Rev. B
Base to Emitter Saturation Voltage V
Transition Frequency fT 250 - MHz VCE=6V, IC=10mA
(TA = 25°C unless otherwise specified)
60 - - V IC=100µA, IE=0
(BR)CBO
50 - - V IC=1mA, IB=0
(BR)CEO
5 - - V IE=100µA, IC=0
(BR)EBO
- - 0.1 µA VCB=60V, IE=0
CBO
- - 0.1 µA VEB=5V, IC=0
EBO
- - 0.3 V IC=100mA, IB=10mA
CE(sat)
- - 1.0 V IC=100mA, IB=10mA
BE(sat)
Test Conditions
Page 1 of 4
Page 2
Elektronische Bauelemente
CHARACTERISTIC CURVES
2SC1623K
NPN Epitaxial Planar Transistor
0.1A , 60V
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
28-Jan-2011 Rev. B
Page 2 of 4
Page 3
Elektronische Bauelemente
CHARACTERISTIC CURVES
2SC1623K
NPN Epitaxial Planar Transistor
0.1A , 60V
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
28-Jan-2011 Rev. B
Page 3 of 4
Page 4
2SC1623K
Elektronische Bauelemente
NPN Epitaxial Planar Transistor
0.1A , 60V
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
28-Jan-2011 Rev. B
Page 4 of 4
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