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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1619
DESCRIPTION ·
·With TO-3 package
·High current capacity
·Wide safe oprating area
APPLICATIONS
·For audio frequency output applications
PINNING(see fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 6 A
ICM Collector current-peak 10 A
PC Collector power dissipation
Collector-base voltage Open emitter 100 V
Collector-emitter voltage Open base 80 V
Emitter-base voltage Open collector 6 V
℃)
T
=25℃
C
50 W
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1619
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
Collector-emitter sustaining voltage IC=100mA; IB=0 80 V
Emitter-base breakdown voltage IE=1mA; IC=0 6 V
Collector-emitter saturation voltage IC=4A;IB=0.4 A 2.0 V
Base-emitter saturation voltage IC=4A;IB=0.4 A 2.5 V
Collector cut-off current VCB=100V; IE=0 0.1 mA
Emitter cut-off current VEB=6V; IC=0 0.1 mA
DC current gain IC=3A ; VCE=4V 20 180
fT Transition frequency IC=0.5A ; VCE=12V 10 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1619
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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