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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1617
DESCRIPTION ·
·With TO-3 package
·High voltage: V
·Wide safe oprating area
APPLICATIONS
·For B/W white TV horizontal output
applications
PINNING(see fig.2)
PIN DESCRIPTION
CBO(min)
:300V
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 7 A
IE Emitter current -7 A
PC Collector power dissipation TC=25℃ 50 W
Tj Junction temperature 150 ℃
Collector-base voltage Open emitter 300 V
Collector-emitter voltage Open base 100 V
Emitter-base voltage Open collector 5 V
℃)
T
Storage temperature -55~150 ℃
stg
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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1617
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
Collector-emitter sustaining voltage IC=100mA; IB=0 100 V
Collector-emitter saturation voltage IC=5A;IB=0.5 A 1.2 V
Base-emitter saturation voltage IC=5A;IB=0.5 A 1.5 V
Collector cut-off current VCB=250V; IE=0 1.0 mA
Emitter cut-off current VEB=5V; IC=0 1.0 mA
DC current gain IC=1A ; VCE=5V 30 150
DC current gain IC=7A ; VCE=5V 15
fT Transition frequency IC=0.5A ; VCE=5V 10 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1617
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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