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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1610
DESCRIPTION ·
·With TO-3 package
·High current capability
·Fast switching speed
APPLICATIONS
·For high speed power switching
applications
PINNING(see fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 10 A
PT Total power dissipation TC=25℃ 100 W
Tj Junction temperature 175 ℃
T
stg
Collector-base voltage Open emitter 150 V
Collector-emitter voltage Open base 100 V
Emitter-base voltage Open collector 6 V
Storage temperature -55~175 ℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
Thermal resistance junction to case 1.17 ℃/W
th j-C
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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1610
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
CEO
I
EBO
Collector-emitter sustaining voltage IC=0.1A; IB=0 100 V
Collector-base breakdown voltage IC=1m A; IE=0 150 V
Emitter-base breakdown voltage IE=1mA; IC=0 6 V
Collector-emitter saturation voltage IC=10 A;IB=1 A 1.0 V
Base-emitter saturation voltage IC=10 A;IB=1 A 2.0 V
Collector cut-off current VCB=100V; IE=0 0.1 mA
Collector cut-off current VCE=60V; IB=0 1.0 mA
Emitter cut-off current VEB=6V; IC=0 0.1 mA
hFE DC current gain IC=5A ; VCE=5V 30 160
2
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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1610
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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