Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1577
DESCRIPTION
·With TO-3 package
·High voltage
·High speed switching
APPLICATIONS
·For switching regulator and general
purpose applications
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 8 A
PC Collector power dissipation TC=25℃ 80 W
Collector-base voltage Open emitter 500 V
Collector-emitter voltage Open base 400 V
Emitter-base voltage Open collector 7 V
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1577
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
Collector-emitter breakdown voltage IC=25mA ;IB=0 400 V
(BR)CEO
Emitter-base breakdown voltage IE=1mA ;IC=0 7 V
(BR)EBO
V
Collector-emitter saturation voltage IC=5A; IB=1A 0.5 V
CEsat
V
Base-emitter saturation voltage IC=5A; IB=1A 1.3 V
BEsat
I
Collector cut-off current VCB=500V; IE=0 0.1 mA
CBO
I
Emitter cut-off current VEB=7V; IC=0 0.1 mA
EBO
h
DC current gain IC=3A ; VCE=4V 30
FE
fT Transition frequency IC=0.5A ; VCE=12V 7 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1577
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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