Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1516
DESCRIPTION
·With TO-220 package
·Low collector saturation voltage
APPLICATIONS
·For medium power amplifer applicatons
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 1.5 A
ICM Collector current-peak 3.0 A
PC Collector power dissipation TC=25℃ 10 W
Collector-base voltage Open emitter 35 V
Collector-emitter voltage Open base 35 V
Emitter-base voltage Open collector 5 V
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1516
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
Collector-emitter breakdown voltage IC=25mA ,IB=0 35 V
(BR)CEO
Emitter-base breakdown voltage IE=1mA ,IC=0 5 V
(BR)EBO
V
Collector-emitter saturation voltage IC=1A; IB=0.1A 2.0 V
CEsat
V
Base-emitter saturation voltage IC=1A; IB=0.1A 1.5 V
BEsat
I
Collector cut-off current VCB=35V; IE=0 20
CBO
I
Emitter cut-off current VEB=5V; IC=0 20
EBO
μA
μA
hFE DC current gain IC=0.5A ; VCE=2V 60 200
fT Transition frequency IC=0.2A ; VCE=10V 110 MHz
h
Classifications
FE
B C
60-120 100-200
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1516
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
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